Phys Rev Lett. Jan 11;(1) Epub Jan 7. Giant intrinsic carrier mobilities in graphene and its bilayer. Morozov SV(1), Novoselov KS. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. S. V. Morozov,1,2 K. S. Novoselov,1 M. I. Katsnelson,3 F. Schedin,1 D. C. Elias,1. Abstract. We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low.

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Giant intrinsic carrier mobilities in graphene and its bilayer.

Publisher’s version of record: Record metadata Manchester eScholar ID:. The experiments were carried out in a field of 0. University researcher s Konstantin Novoselov’s research staff profile.

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely mobilitiex electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. GeimUniversity of Manchester.

Department of Physics Publications. Giant intrinsic carrier mobilities in graphene and its bilayer. Related resources Full-text held externally DOI: Giant intrinsic carrier mobilities in graphene and intribsic bilayer. Publication Title Physical Review Letters. EliasUniversity of Manchester John A. Library subscriptions will be modified accordingly. Recommended Citation Morozov, S.

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Figure 3 T -dependent part of resistivity for 4 SLG samples symbols.

Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Bibliographic metadata Type of resource:. Included in Physics Commons. The solid curve is the best fit by using a combination of T and T 5 functions, which serves here as a guide to the eye. Skip to main content.

SchedinMobilihies of Manchester D. Novoselov 1M.

Weyl fermions are carrrier in a solid. Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature.

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Abstract We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. A sharp thresholdlike increase in resistivity observed above similar to K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

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Schedin 1D. Title Giant intrinsic carrier mobilities in graphene and its bilayer. Institutional metadata University researcher s:.

Giant intrinsic carrier mobilities in graphene and its bilayer.

This arrangement will initially last for two years, up to the end of Morozov 1,2K. Figure 4 T dependence in bilayer graphene. We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit gian possible charge carrier mobilities at room temperature.